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STS10DN3LH5
Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET
Features
Type STS10DN...
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STS10DN3LH5
Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power
MOSFET
Features
Type STS10DN3LH5
■ ■ ■ ■ ■
VDSS 30 V
RDS(on) max 0.021 Ω
ID 10 A
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
SO-8
Application
■
Switching applications Figure 1. Internal schematic diagram
Description
This STripFET™V Power
MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
Table 1.
Device summary
Marking 10DD3L Package SO-8 Packaging Tape and reel
Order codes STS10DN3LH5
May 2009
Doc ID 15624 Rev 1
1/13
www.st.com 13
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Contents
STS10DN3LH5
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 4 5
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
Doc ID 15624 Rev 1
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STS10DN3LH5
Electrical ratings
1
Electrical ratings
Table 2...