STS2622

S T S 2622 S amHop Microelectronics C orp. F eb,25 2005 V er1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2.5A R DS (ON) S uper high dense cell design for low R DS (ON ). 80 @ V G S = 4.5V 110 @ V G S = 2.5V R ugged and reliable. TS OP 6 package. D1 D2 TS OP 6 Top View G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATING (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage www.DataSheet4U.com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 10 2.5 8 1.25 1 -55 to 150 Unit V V A A A W C Drain C urrent-C ontinuous a @ T c=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 125 C /W 1 S T S 2622 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID = 250uA V GS = 4.5V, ID =2A V GS = 2.5V, ID= 1A V DS = 5V, V GS = 4.5V V DS = 5V, ID =2.5A Min Typ C Max Unit 20 1 100 0.5 0.8 65 90 6 7 220 67 50 1.5 80 110 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Thresh...