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STT2603 Datasheet

Part Number STT2603
Manufacturers SeCoS Halbleitertechnologie GmbH
Logo SeCoS Halbleitertechnologie GmbH
Description P-Channel Enhancement Mode Power MosFET
Datasheet STT2603 DatasheetSTT2603 Datasheet (PDF)

STT2603 Elektronische Bauelemente RoHS Compliant Product -5A, -20V,RDS(ON) 65m £[ P-Channel Enhancement Mode Power Mos.FET Description The STT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT2603 is universally used for all commercial industrial surface mount application . Features * Small package outline * Simple drive requirement D D 6 D 5 S 4 REF. A A1 A2 c D E E1 G Date Code 1 D 2.

  STT2603   STT2603






Part Number STT2605-C
Manufacturers SeCoS
Logo SeCoS
Description P-Channel Enhancement Mode Power MOSFET
Datasheet STT2603 DatasheetSTT2605-C Datasheet (PDF)

Elektronische Bauelemente STT2605-C -3.9A, -30V, RDS(O ) 52mΩ P-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT2605-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The STT2605-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced H.

  STT2603   STT2603







Part Number STT2605
Manufacturers SeCoS Halbleitertechnologie GmbH
Logo SeCoS Halbleitertechnologie GmbH
Description P-Channel Enhancement Mode Power MosFET
Datasheet STT2603 DatasheetSTT2605 Datasheet (PDF)

STT2605 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 80m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2605 is universally used for all commercial-industrial applications. Features * Fast Switching Characteristic * Lower Gate Charge * Small Footprint & Low Profile Package D D 5 S 4 D 6 Date Code 2605 R.

  STT2603   STT2603







Part Number STT2604
Manufacturers SeCoS Halbleitertechnologie GmbH
Logo SeCoS Halbleitertechnologie GmbH
Description N-Channel Enhancement Mode Power MosFET
Datasheet STT2603 DatasheetSTT2604 Datasheet (PDF)

STT2604 Elektronische Bauelemente 5.5A, 3 0V,RDS(ON) 45m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2604 is universally used for all commercial-industrial applications. Features * Lower Gate Charge * Fast Switching Characteristic * Small Footprint & Low Profile Package D D 5 S 4 D 6 REF. A A1 A2 c D E E.

  STT2603   STT2603







Part Number STT2602
Manufacturers SeCoS Halbleitertechnologie GmbH
Logo SeCoS Halbleitertechnologie GmbH
Description N-Channel Enhancement Mode Power MosFET
Datasheet STT2603 DatasheetSTT2602 Datasheet (PDF)

STT2602 Elektronische Bauelemente 6.3A, 20V,RDS(ON) 34m£[ N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT2602 is universally used for all commercial-industrial applications. Features * Low On-Resistance * Capable of 2.5V Gate Drive D D 5 S 4 6 D REF. A A1 A2 c D E E1 Date Code 2602 G 1 D 2 D 3 G S Millime.

  STT2603   STT2603







P-Channel Enhancement Mode Power MosFET

STT2603 Elektronische Bauelemente RoHS Compliant Product -5A, -20V,RDS(ON) 65m £[ P-Channel Enhancement Mode Power Mos.FET Description The STT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The STT2603 is universally used for all commercial industrial surface mount application . Features * Small package outline * Simple drive requirement D D 6 D 5 S 4 REF. A A1 A2 c D E E1 G Date Code 1 D 2603 2 D 3 G S Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Continuous Drain Current (Note 3) Continuous Drain Current (Note 3) Pulsed Drain Current (Note 1,2) Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Symbol VDS VGS ID@TA=25к ID@TA=70к IDM PD@TA=25к Ratings -20 ±12 -5 -4 -20 2 0.016 -55~+150 Unit V V A A A W W /e C e C Thermal Data Parameter Thermal Resistance Junction-ambient (Note 3) (Max) Symbol Rthj-a Ratings 62.5 Unit e C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 STT2603 Elektronische Bauelemente -5A, -20V,RDS(ON) 65m£[ P-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=.


2009-12-29 : STT200    STT253    STT2602    STT2603    STT2604    STT2605    STT2622    STT27    STT2PF60L   


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