STT3PF30L

( DataSheet : www.DataSheet4U.com ) P-CHANNEL 30V - 0.14 Ω - 3A SOT23-6L STripFET™ II POWER MOSFET TYPE STT3PF30L s s STT3PF30L VDSS 30 V RDS(on) <0.165 Ω ID 3A s TYPICAL RDS(on) = 0.14 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs s CELLULAR SOT23-6L INTERNAL SCHEMATIC DIAGRAM MARKING s STA3 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Value 30 30 ± 16 2.4 1.5 10 1.6 Unit V V V A A A W Total Dissipation at TC = 25°C Ptot () Pulse width limited by safe operating area. September 2002 . Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 www.DataSheet4U.com www.DataSheet4U.com STT3PF30L THERMAL DATA Rthj-amb Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient (**)Thermal Resistance Junction-ambient Max. Operating Junction...