STT5N2VH5
N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET in a SOT23-6L package
Datasheet — production data
Features
4 5 6
3
2 1
SOT23-6L
Order code VDS RDS(on) max
ID PTOT
STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 1.6 W
• Very low profile package • Conduction losses reduced • Switching losses reduced • 2.5 V gate drive
• Very low threshold device
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET d.
N-channel MOSFET
STT5N2VH5
N-channel 20 V, 0.025 Ω typ., 5 A STripFET™ V Power MOSFET in a SOT23-6L package
Datasheet — production data
Features
4 5 6
3
2 1
SOT23-6L
Order code VDS RDS(on) max
ID PTOT
STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 1.6 W
• Very low profile package • Conduction losses reduced • Switching losses reduced • 2.5 V gate drive
• Very low threshold device
Figure 1. Internal schematic diagram
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class.
Order code STT5N2VH5
Table 1. Device summary
Marking
Packages
STD1
SOT23-6L
Packaging Tape and reel
March 2014
This is information on a product in full production.
DocID026116 Rev 1
1/13
www.st.com
Contents
Contents
STT5N2VH5
1 Electrical ratings . . . . . . . . . . . . . . ..