STU5N95K3
Datasheet
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power MOSFET in an IPAK package
Features
TAB
Order code
...
STU5N95K3
Datasheet
N-channel 950 V, 3 Ω typ., 4 A MDmesh K3 Power
MOSFET in an IPAK package
Features
TAB
Order code
VDS
RDS(on) max.
ID
STU5N95K3
950 V
3.5 Ω
4A
3
2 1
100% avalanche tested
Extremely high dv/dt capability
IPAK
Very low intrinsic capacitance
Improved diode reverse recovery characteristics
D(2, TAB)
Zener-protected
Applications
G(1)
Switching applications
Description
S(3)
This MDmesh K3 Power
MOSFET is the result of improvements applied to
AM01476v1_tab STMicroelectronics’ MDmesh technology, combined with a new optimized vertical
structure. This device boasts an extremely low on-resistance, superior dynamic
performance and high avalanche capability, rendering it suitable for the most
demanding applications.
Product status link STU5N95K3
Product summary
Order code
STU5N95K3
Marking
5N95K3
Package
IPAK
Packing
Tube
DS14293 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STU5N95K3
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source
voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
IAR
Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max)
EAS
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
dv/dt (2) Peak diode recover...
