STF6N65K3, STFI6N65K3, STU6N65K3
N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK...
STF6N65K3, STFI6N65K3, STU6N65K3
N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power
MOSFET in TO-220FP, I²PAKFP, IPAK
Datasheet — production data
Features
Order codes VDSS RDS(on) max. STF6N65K3 STFI6N65K3 650 V < 1.3 Ω STU6N65K3
ID 5.4 A
Ptot 30 W 110 W
■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery
characteristics ■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power
MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
TAB
3 2 1
TO-220FP
1 2 3
I²PAKFP
IPAK
3
2 1
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1. Device s...