STU7N105K5

STP7N105K5, STU7N105K5, STW7N105K5 N-channel 1050 V, 1.4 Ω typ., 4 A MDmesh™ K5 Power MOSFETs in TO-220, IPAK and TO-247 packages Datasheet - production data TAB TO-220 TAB 3 2 1 IPAK 3 2 1 TO-247 3 2 1 Figure 1: Internal schematic diagram D(2, TAB) G(1) Features Order code VDS RDS(on) max. ID PTOT STP7N105K5 STU7N105K5 1050 V 2 Ω 4 A 110 W STW7N105K5  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) Order code STP7N105K5 STU7N105K5 STW7N105K5 AM01476v1 Table 1: Device summary Marking Package TO-220 7N105K5 IPA...