STU8NA80

STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU8NA80 www.DataSheet4U.com s s V DSS 800 V R DS(on) < 1.0 Ω ID 8.3 A s s s s TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD. 1 2 3 Max220TM The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages. DESCRIPTION INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o Value 800 800 ± 30 8.3 5.3 33.2 160 1.28 -65 to 150 150 Unit V V V A A A W W/ o C o o C C () Pulse width limited by safe operating area Ma...