N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET
TYPE STU8NC90Z STU9NC90ZI
s s s s s s
...
N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220 Zener-Protected PowerMESH™III
MOSFET
TYPE STU8NC90Z STU9NC90ZI
s s s s s s
STU8NC90Z STU8NC90ZI
VDSS 900 V 900 V
RDS(on) < 1.38Ω < 1.38Ω
ID 7A 7A
TYPICAL RDS(on) = 1.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1
2
3
Max220
I-Max220
DESCRIPTION The third generation of MESH OVERLAY ™ Power
MOSFETs for very high
voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU8NC90Z Drain-source
Voltage (VGS = 0) Drain-gate
Voltage (RGS = 20 kΩ) Gate- source
Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery
voltage slope Insulation Winthstand
Voltage (DC) Storage Temperature Max. Operating Junction Temperature -–65 to 150 150
(1)ISD ≤ 7A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX (*)Limited only by maximum temperature allowed
Value STU8N...