STD8NM50N, STP8NM50N, STU8NM50N
N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packag...
STD8NM50N, STP8NM50N, STU8NM50N
N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power
MOSFET in DPAK, TO-220 and IPAK packages
Datasheet — production data
Features
TAB
Order codes STD8NM50N STP8NM50N STU8NM50N
■ ■ ■
VDSS@TJMAX RDS(on)max. 550 V < 0.79 Ω
ID
1
3
5A
TAB
DPAK
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
1 2 3
1 TAB
3 2
Applications
■
TO-220
IPAK
Switching applications Figure 1. Internal schematic diagram
Description
These devices are N-channel Power
MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
$ 4!"
'
3
!-V
Table 1.
Device summary
Marking Packages DPAK 8NM50N TO-220 Tube IPAK Packaging Tape and reel
Order codes STD8NM50N STP8NM50N STU8NM50N
September 2012
This is information on a product in full production.
Doc ID 17413 Rev 6
1/19
www.st.com 19
Free Datasheet http://www.datasheet4u.com/
Contents
STD8NM50N, STP8NM50N, STU8NM50N
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . ...
