STU9NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STU9NA60
www.DataSheet4U.com s TYPICAL
s
V DSS 600 V
R DS(on) < 0.8 Ω
ID 9A
s s s s
RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accom.
N-channel Power MOSFET
STU9NA60
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PRELIMINARY DATA TYPE STU9NA60
www.DataSheet4U.com s TYPICAL
s
V DSS 600 V
R DS(on) < 0.8 Ω
ID 9A
s s s s
RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
1
2
3
The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages.
DESCRIPTION
Max220TM
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol V DS VDGR V GS ID ID I DM ( • ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 600 600 ± 30 9 5.7 36 145 1.16 -65 to 150 150
Unit V V V A A A W W/ o C
o o
C C
(•) Pulse width limited by safe operating area
March 19.