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STU9NB80 Datasheet

Part Number STU9NB80
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STU9NB80 DatasheetSTU9NB80 Datasheet (PDF)

® STU9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH™ MOSFET TYPE STU9NB80 s s s s s V DSS 800 V R DS(on) <1Ω ID 9 A www.DataSheet4U.com s TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The n.

  STU9NB80   STU9NB80






N-channel Power MOSFET

® STU9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH™ MOSFET TYPE STU9NB80 s s s s s V DSS 800 V R DS(on) <1Ω ID 9 A www.DataSheet4U.com s TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE Max220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o Value 800 800 ± 30 9 5.6 36 160 1.28 4 -65 to 150 150 (1) I SD ≤ 9.3A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ T.


2008-11-19 : G6N    G6N-2-Y    EC1SM    PH1819-33    PH1819-45    DVM-3006    DVM-3006G    ORD211    ORD221    ORD228VL   


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