STV160NF02L

www.DataSheet4U.com ® STV160NF02L N - CHANNEL 20V - 0.0016Ω - 160A - PowerSO-10 STripFET™ MOSFET TYPE STV160NF02L s s s s s s s V DSS 20 V R DS(on ) < 0.0025 Ω ID 160 A TYPICAL RDS(on) = 0.0016 Ω ULTRA LOW ON-RESISTANCE ULTRA FAST SWITCHING 100% AVALANCHE TESTED VERY LOW GATE CHARGE LOW THRESHOLD DRIVE LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE 10 1 PowerSO-10 INTERNAL SCHEMATIC DIAGRAM DESCRIPTION The STV160NF02L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial. APPLICATIONS BUCK CONVERTERS IN HIGH PERFORMACE TELECOM AND VRMs DC-DC CONVERTERS CONNECTION DIAGRAM (TOP VIEW) s ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR VGS I D (* * ) ID I DM ( ) P tot T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor Storage Temperature Max. Operating Junction T emperature o Value 20 20 ± 20 160 113 640 160 1.07 -65 to 175 ...