STV160NF03L

STV160NF03L N-CHANNEL 30V - 0.0019Ω - 160A PowerSO-10 STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STV160NF03L 30 V < 0.0028 Ω 160 A s TYPICAL RDS(on) = 0.0019 Ω s LOW THRESHOLD DRIVE s ULTRA LOW ON-RESISTANCE s ULTRA FAST SWITCHING s 100% AVALANCHE TESTED s VERY LOW GATE CHARGE s LOW PROFILE, VERY LOW PARASITIC INDUCTANCE PowerSO-10 PACKAGE DESCRIPTION The STV160NF03L represents the second generation of Application Specific STMicroelectronics well established STripFET™ process based on a very unique strip layout design. The resulting MOSFET shows unrivalled high packing density with ultra low on-resistance and superior switching charactestics. Process simplification also translates into improved manufacturing reproducibility. This device is particularly suitable for high current, low voltage switching application where efficiency is crucial APPLICATIONS s BUCK CONVERTERS IN HIGH PERFORMANCE TELECOM AND VRMs DC- DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID(**) Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor EAS (1) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max. Operating Junction Temperature (q) Pulse width limited by safe operating area November 2002 10 1 PowerSO-10 INTERNAL SCHEMATIC DIAGRAM CONNECTION DIA...