STW12N170K5

STW12N170K5 Datasheet N-channel 1700 V, 2.3 Ω typ., 5 A, MDmesh K5 Power MOSFET in a TO‑247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STW12N170K5 1700 V 2.9 Ω 5A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge Zener-protected PTOT 250 W Applications Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STW12N170K5 Product summary Order code STW12N170K5 Marking 12N170K5 Package TO-247 Packing Tube DS12847 - Rev 2 - March 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current at TC = 25 °C ID Drain current at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area 2. ISD ≤ 5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS 3. VDS ≤ 1360 V Symbol RthJC RthJA Table 2. Thermal data Par...