STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power MOSFET in D2PAK, I2PA...
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
N-channel 650 V, 0.160 Ω typ., 18 A MDmesh™ V Power
MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5
VDS @ TJmax
RDS(on) max
ID
710 V 0.19 Ω 18 A
■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
TAB
2
1
D2PAK
3
TAB
TAB
123
I2PAK
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V Power
MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power
MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
' 3
!-V
Table 1. Device summary Order codes STB20N65M5 STI20N65M5 STP20N65M5 STW20N65M5
Marking 20N65M5
Package D2PAK I2PAK TO-220 TO-247
February 2013
This is information on a product in full production.
Doc ID 022865 Rev 2
Packaging Tape and reel
Tube
1/21
www.st.com
21
Contents
Contents
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....