STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND
N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power MOSFET (with fas...
STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND
N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II Power
MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
TAB
3 1
D2PAK
TAB
3 2 1
TO-220FP
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
' 3
!-V
Features
Order codes VDS @TJ max. RDS(on) max. ID
STB34NM60ND
STF34NM60ND STP34NM60ND
650 V
0.110 Ω 29 A
STW34NM60ND
The world’s best RDS(on) in TO-220 amongst the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
Applications
Switching applications
Description
These devices are N-channel FDmesh™ V Power
MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon...
