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STW45NM50 MOSFET Datasheet PDFN-Channel MOSFET N-Channel MOSFET |
　
　
　
| Part Number | STW45NM50 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | Isc N-Channel MOSFET Transistor
INCHANG E Semiconductor
STW45NM50
·FEATURES  ·Low input capacitance and gate charge ·Low gate input resistance ·100% aval anche tested ·Minimum Lot-to-Lot varia tions for robust device
performance and reliable operation
·APPLICATIONS ·T he MDmesh™ family is very suitable fo r increasing
power density of high volt age converters allowing system miniatur ization and higher efficiencies. ·ABS OLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 550 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25â „ƒ TC=100℃ Drain Current-Sin . |
| Manufacture | INCHANGE |
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| Part Number | STW45NM50 |
|---|---|
| Description | N-CHANNEL MOSFET |
| Feature | STW45NM50
N-channel 500 V, 0. 08 Ω typ. , 45 A MDmeshâ„¢ Power MOSFET in a TO-2 47 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schema tic diagram Features Order code STW45N M50 VDS 500 V RDS(on) max 0. 1 Ω ID 45 A ï‚· 100% avalanche tested ï‚· Hig h dv/dt and avalanche capabilities ï‚· Low input capacitance and gate charge ï ‚· Low gate input resistance Applicatio ns ï‚· Switching applications Descripti on This N-channel Power MOSFET is devel oped using STMicroelectronics' revoluti onary MDmeshâ„¢ technology, which assoc iates the multiple drain process with t he company's PowerMESHâ„¢ horizo . |
| Manufacture | ST Microelectronics |
| Datasheet |
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