STW9NA80

® STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85Ω - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE STW 9NA80 STH9NA80FI s s s s s s s V DSS 800 V 800 V R DS(on) < 1.0 Ω < 1.0 Ω ID 9.1 A 5.9 A TYPICAL RDS(on) = 0.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 3 2 1 3 2 1 ISOWATT218 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ST W9NA80 V DS V DGR V GS ID ID I DM ( ) P tot V ISO Ts tg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature o o Un it STH9NA80F I 800 800 ± 30 V V V 5.9 3.9 36.4 80 0.64 4000 A A A W W /o C V o o 9.1 6 36.4 190 1.52  -65 to 150 150 C C () Pulse width limited by safe operating area November 1998 1/10 STW9NA80-STH9NA80FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.65 30 0.1 300 ISOW AT T218 1.56 o o o C/W C/W C/W o C Thermal Resistance Junction-ambien...