SUD50N025-09BP

New Product SUD50N025-09BP Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (W) 0.0086 @ VGS = 10 V 0.012 @ VGS = 4.5 V ID (A)a, e 62 52 Qg (Typ) 18.5 nC TO-252 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion, High-Side – Desktop PC D RoHS COMPLIANT GDS Top View Drain Connected to Tab Ordering Information: SUD50N025-09BP—E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C TC = 70_C TA = 25_C TA = 70_C TC = 25_C TA = 25_C L = 0.1 mH TC = 25_C TC = 70_C TA = 25_C TA = 70_C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 25 "20 62e 51e 26b, c 22b, c 100 37 6.7b, c 28 39.2 55 39 10b, c 7b, c –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t p 10 sec Steady State RthJA RthJC Notes: a. Based on TC = 25_C. b. Surface mounted on 1” x 1” FR4 board. c. t = 10 sec d. Maximum under steady state conditions is 50 _C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 73477 S–51449—Rev. A, 01-Aug-05 Typical 1...