SUD50N025-4m5P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
25 0.0045 at VGS = 1...
SUD50N025-4m5P
Vishay Siliconix
N-Channel 25-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
25 0.0045 at VGS = 10 V 0.0060 at VGS = 4.5 V
ID (A)a, d 50 50
Qg (Typ.) 36.25 nC
TO-252
FEATURES TrenchFET® Power
MOSFET 100 % Rg and UIS Tested
APPLICATIONS DC/DC Conversion, Low-Side
- Desktop PC - Server
D
RoHS
COMPLIANT
GDS Top View
Drain Connected to Tab
Ordering Information: SUD50N025-4m5P-E3 (Lead (Pb)-free)
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Repetitive Avalanche Energy
L = 0.1 mH
IAS EAS
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 25 ± 20
50a, d 50a, d 18b, c 15b, c 100
28 39 50a, d 2.1b, c 108a 75.6a 2.5b, c 1.75b, c - 55 to 175
Unit V
A
V A W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb, c Maximum Junction-to-Case
t ≤ 10 s Steady State
Symbol
RthJA RthJC
Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Calculated based on maximum junction temperature. Package limitation current is 50 A. e. Maximum under Steady State conditions is 90 °C/W.
Typical 48 1.6
Maximum 60 2...
