SUM60N08-07T

www.DataSheet4U.com SUM60N08-07T New Product Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (W) 0.007 @ VGS = 10 V ID (A) 60a D TrenchFETr Power MOSFET Plus Temperature Sensing Diode D New Low Thermal Resistance Package APPLICATIONS D Automotive D Industrial D D2PAK-5L T1 G T2 1 2 3 4 5 D1 D2 S N-Channel MOSFET G D T1 S T2 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Conduction)d Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 75 "20 60a 60a 240 60a 60a 180 300c 3.75d –55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71833 S-20174—Rev. A, 18-Mar-02 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 0.5 Unit _C/W 1 www.DataSheet4U.com SUM60N08-07T Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID =...