SUM70N04-07L
New Product
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
FEATURES
...
SUM70N04-07L
New Product
Vishay Siliconix
N-Channel 40-V (D-S) 175_C
MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
FEATURES
rDS(on) (W) ID (A)
70 a 67
0.0074 @ VGS = 10 V 0.011 @ VGS = 4.5 V
D TrenchFETr Power
MOSFET D 175_C Junction Temperature D Low Threshold
APPLICATIONS
D Motor Control D Automotive - 12-V Boardnet
D
TO-263
G
G
D S S
Top View Ordering Information: SUM70N04-07L N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cd TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
40 "20 70a 47 120 40 80 100c 3.75 - 55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for
voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 72345 S-31617—Rev. A, 11-Aug-03 www.vishay.com PCB Mountd
Symbol
RthJA RthJC
Limit
40 1.4
Unit
_C/W
1
SUM70N04-07L
Vishay Siliconix
New Product
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown
Voltage Gate-Threshold
Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 32 V, VGS = 0 V Zero...
