SUM70N06-11
New Product
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
60
...
SUM70N06-11
New Product
Vishay Siliconix
N-Channel 60-V (D-S), 175_C
MOSFET
FEATURES PRODUCT SUMMARY
V(BR)DSS (V)
60
rDS(on) (W)
0.011
ID (A)
70
D TrenchFETr Power
MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package
APPLICATIONS
D Automotive and Industrial
D
TO-263
G
G
D S S N-Channel
MOSFET
Top View SUM70N06-11
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source
Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc PD TJ, Tstg TC = 25_C TC = 100_C ID IDM IAR EAR
Symbol
VGS
Limit
"20 70 49 160 35 61 120b 3.75 - 55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient—PCB Mountc Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for
voltage derating. c. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72008 S-03592—Rev. B, 31-Mar-03 www.vishay.com
Symbol
RthJA RthJC
Limit
40 1.25
Unit
_C/W
1
SUM70N06-11
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 48 V, VGS = 0 V Zero Gate
Voltage g Dr...
