SUM85N03-08P

www.DataSheet4U.com SUM85N03-08P Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.0075 @ VGS = 10 V 0.0105 @ VGS = 4.5 V ID (A) 85 72 D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance 100% Rg Tested APPLICATIONS D TO-263 D Buck Converter − High Side − Low Side D Synchronous Rectifier − Secondary Rectifier G G D S Top View S Ordering Information: SUM85N03-08P SUM85N03-08P-E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 85 60 200 50 125 100b 3.75 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mountc J Junction-to-Ambient ti t A bi t Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71816 S-32523—Rev. D, 08-Dec-03 www.vishay.com Free Air RthJA RthJC Symbol Limit 40 62.5 1.5 Unit _C/W 1 www.DataSheet4U.com SUM85N03-08P Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-S...