SUM90N08-4m8P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
0.0048 at VGS = ...
SUM90N08-4m8P
Vishay Siliconix
N-Channel 75-V (D-S)
MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
0.0048 at VGS = 10 V 75
0.006 at VGS = 8 V
ID (A) 90d 90d
Qg (Typ) 105
TO-263
FEATURES TrenchFET® Power
MOSFET 175 °C Junction Temperature 100 % UIS Tested
APPLICATIONS Power Supply
- Half-Bridge - Secondary Synchronous Rectification Industrial
D
RoHS
COMPLIANT
G DS Top View
Ordering Information: SUM90N08-4m8P-E3 (Lead (Pb)-free)
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Pulse Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 75 ± 20 90d 90d 240 70 245
300b 3.75
- 55 to 175
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for
voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited.
Document Number: 74458 S-71663-Rev. C, 06-Aug-07
Symbol RthJA RthJC
Limit 40 0.5
Unit °C/W
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SUM90N08-4m8P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body...