SUM90N10-8m2P
Vishay Siliconix
N Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
RDS(on) ()
100 0.0082 at V...
SUM90N10-8m2P
Vishay Siliconix
N Channel 100 V (D-S)
MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
RDS(on) ()
100 0.0082 at VGS = 10 V
ID (A) 90d
Qg (Typ) 97
TO-263
FEATURES TrenchFET® Power
MOSFETS 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Power Supply
- Secondary Synchronous Rectification Industrial Primary Switch
D
RoHS
COMPLIANT
GD S Top View
Ordering Information: SUM90N10-8m2P-E3 (Lead (Pb)-free)
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 100 ± 20 90d 90d 240 60 180 300b 3.75
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes: a. Duty cycle 1 %. b. See SOA curve for
voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited.
Symbol RthJA RthJC
Limit 40 0.5
Unit V
A mJ W °C
Unit °C/W
Document Number: 74643
www.vishay.com
S12-0335-Rev. B, 13-Feb-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay...
