SUN04A65IS Datasheet - New Generation N-Ch Power MOSFET

SUN04A65IS New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance...

SUN04A65IS New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features  Low drain-source On resistance: RDS(on)=2.4Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6pF (Typ.)  Lower EMI noise  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SUN04A65IS SUN04A65 I-PAK (Short Lead) GDS I-PAK (Short Lead) Marking Information SUN 04A65 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Single avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD TJ Tstg * Limited only max...