SUN0550F
Advanced N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on...
SUN0550F
Advanced N-Ch Power
MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
Low drain-source On resistance: RDS(on)=1.23Ω (Typ.) Low gate charge: Qg=10.5nC (Typ.) Low reverse transfer capacitance: Crss=2pF (Typ.) RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SUN0550F
SUN0550
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AAUUKK SU△ΔNY0YM5MD5DD0D SDB20D45
Column 1: Manufacturer Column 2: Production Information
e.g.) △YMDD
-. △: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source
voltage Gate-source
voltage
Drain current (DC) *
Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
ID
Tc=25C Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rating 500 30 4.5 2.85 18 281 4.5 2.9 29 150
-55~150
Unit V V A A A mJ A mJ W C C
Rev. date: 01-MAY-13
KSD-T0O124-000
www.auk.co.kr
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Thermal Characteristics
Characteristic
Thermal resistance, junction to case Thermal resistance, junction to ambient
Symbol Rth(j-c) Rth(j-a)
SUN0550F
Rating Max. 4.27 Max. 62.5
Unit C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-so...