SUP45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.013 @ V...
SUP45N03-13L
Vishay Siliconix
N-Channel 30-V (D-S), 175_C
MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (W)
0.013 @ VGS = 10 V 0.02 @ VGS = 4.5 V
ID (A)
45a 45a
TO-220AB
D
G DRAIN connected to TAB
G D S Top View
S N-Channel
MOSFET
SUP45N03-13L
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 125_C
Symbol
VDS VGS ID IDM IAR EAR PD TJ, Tstg
Limit
30 "10 45a 34a 100 45 100 88c –55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for
voltage derating. d. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70804 S-05011—Rev. F, 29-Oct-01 www.vishay.com Free Air
Symbol
RthJA RthJC
Limit
85 1.7
Unit
_C/W
1
SUP45N03-13L
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate
Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V,...
