TEMIC
Siliconix
SUP/SUB50N06-18
N-Channel Enhancement-Mode lransistor
175°C Maximum Junction Temperature
Product Su...
TEMIC
Siliconix
SUP/SUB50N06-18
N-Channel Enhancement-Mode lransistor
175°C Maximum Junction Temperature
Product Summary
V(BR)DSS (V) 60
rDS(on) (Q) 0.018
TO-220AB
o
ID (A) 48
TO-263
D
DRAIN connected to TAB
GDS ThpView SUP50N06·18
G DS ThpView
SUB50N06-18
S N·Channel
MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain·Source
Voltage
Gate-Source
Voltage
Continuous Drain Current (TJ = 175'C)
Tc=25'C Tc = 100'C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy"
L=O.lmH
Power Dissipation
TC = 25'C (TO-220AB and TO·263) TA = 25'C (TO.263)b
Operating Junction and Storage Thmperature Range
VDS VGS
ID
IDM IAR EAR
Po
TJ, Tstg
60 ±20 48 34 240 60 90 83 3.7 -55 to 175
V
A
mJ W 'C
Thermal Resistance Ratings
Parameter
Symbol
Junction·to·Ambient
PCB Mount (TO-263)b Free Air (TO·220AB)
Junction-ta-Case
Notes: a. Dutycycle s 1%. b. When mounted on I" square PCB (FR-4 material).
RthJA Rt...
