N-Channel 60-V (D-S) MOSFET
SUP60N06-12P
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60 0.012 at VGS = 10 ...
N-Channel 60-V (D-S)
MOSFET
SUP60N06-12P
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60 0.012 at VGS = 10 V
ID (A) 60d
Qg (Typ.) 33
TO-220AB
FEATURES Halogen-free According to IEC 61249-2-21
Definition TrenchFET® Power
MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Synchronous Rectifier Power Supplies
D
GD S Top View
Ordering Information: SUP60N06-12P-E3 (Lead (Pb)-free) SUP60N06-12P-GE3 (Lead (Pb)-free and Halogen-free)
G
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 60 ± 20 60d 54d 80 40 80
100b 3.25
- 55 to 150
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for
voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited.
Document Number: 69070 S10-1475-Rev. C, 05-Jul-10
Symbol RthJA RthJC
Limit 40 1.25
Unit °C/W
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SUP60N06-12P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakd...
