SUP75N03-07

SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.007 @ VGS = 10 V 0.01 @ VGS = 4.5 V ID (A) 75a 70 TO-220AB D TO-263 G DRAIN connected to TAB G G D S Top View SUP75N03-07 SUB75N03-07 N-Channel MOSFET D S Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 30 "20 75a 64 Unit V A 240 75 280 120c –55 to 175 mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70794 S-000652—Rev. D, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.25 Symbol Limit 40 Unit _C/W 2-1 SUP/SUB75N03-07 Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C V...