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SUP85N10-10P Datasheet

Part Number SUP85N10-10P
Manufacturers Vishay
Logo Vishay
Description N-Channel 100 V (D-S) MOSFET
Datasheet SUP85N10-10P DatasheetSUP85N10-10P Datasheet (PDF)

SUP85N10-10P Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.010 at VGS = 10 V ID (A) 85d Qg (Typ.) 77 TO-220AB FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Industrial D GD S Top View Ordering Information: SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless .

  SUP85N10-10P   SUP85N10-10P






Part Number SUP85N10-10
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SUP85N10-10P DatasheetSUP85N10-10 Datasheet (PDF)

SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.0105 at VGS = 10 V 0.012 at VGS = 4.5 V TO-220AB ID (A) 85a FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-263 D DRAIN connected to TAB GD S Top View SUP85N10-10 ORDERING INFORMATION Package TO-220AB TO-263 G DS Top View SUB85N10-10 G S N-Channel MOSFET Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3.

  SUP85N10-10P   SUP85N10-10P







N-Channel 100 V (D-S) MOSFET

SUP85N10-10P Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 0.010 at VGS = 10 V ID (A) 85d Qg (Typ.) 77 TO-220AB FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Industrial D GD S Top View Ordering Information: SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 100 ± 20 85d 83 240 60 180 227b 3.75 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. Symbol RthJA RthJC Limit 40 0.55 Unit V A mJ W °C Unit °C/W Document Number: 64833 www.vishay.com S11-2239-Rev. B, 14-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUP85N10-10P Vishay Siliconix SPE.


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