N-Channel 30-V (D-S) MOSFET
SUP90N03-03
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.0029 at VGS = 10 V...
N-Channel 30-V (D-S)
MOSFET
SUP90N03-03
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.0029 at VGS = 10 V 0.0033 at VGS = 4.5 V
TO-220AB
ID (A)a, e 90 90
Qg (Typ) 82 nC
FEATURES TrenchFET® Power
MOSFET
100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
OR-ing Server DC/DC
D
DRAIN connected to TAB
G
GDS Top View
Ordering Information: SUP90N03-03-E3 (Lead (Pb)-free)
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
T...
