SUP90P06-09L

SUP90P06-09L New Product Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) −60 FEATURES D TrenchFETr Power MOSFET ID (A)c −90 −90 rDS(on) (W) 0.0093 @ VGS = −10 V 0.0118 @ VGS = −4.5 V APPLICATIONS D DC/DC Primary Switch D Automotive − 12-V Boardnet − High-Side Switches − Motor Drives TO-220AB S G DRAIN connected to TAB G D S Top View Ordering Information: SUP90P06-09L—E3 D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentc (TJ = 175_C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 0 1 mH TC = 25_C TA = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit −60 "20 −90 −67 −200 −65 211 250b 2.4 −55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Free Air Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. Limited by package. Document Number: 73010 S-41203—Rev. A, 21-Jun-04 www.vishay.com Symbol RthJA RthJC Limit 62 0.6 Unit _C/W 1 SUP90P06-09L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = −250 mA VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −60 V, VGS = 0 V Zero Gate Voltage g Drain...