SUU09N10-76P

SUU09N10-76P Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.076 at VGS = 10 V 100 0.096 at VGS = 6 V ID (A) 9d 9d Qg (Typ.) 8.5 TO-251 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converters Motor Control Drain connected to DRAIN-TAB GDS Top View Ordering Information SUU09N10-76P-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 100 ± 20 9d 9d 20 18 16.2 32.1b 2.5 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited Symbol RthJA RthJC Limit 50 3.9 Unit V A mJ W °C Unit °C/W Document Number: 63456 www.vishay.com S11-2184-Rev. A, 07-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DI...