www.DataSheet4U.net
SUD/SUU10P06-280L
Vishay Siliconix
P-Channel 60-V (D-S), 175_C MOSFET, Logic Level
PRODUCT SUMMARY...
www.DataSheet4U.net
SUD/SUU10P06-280L
Vishay Siliconix
P-Channel 60-V (D-S), 175_C
MOSFET, Logic Level
PRODUCT SUMMARY
VDS (V)
–60
rDS(on) (W)
0.170 @ VGS = –10 V 0.280 @ VGS = –4.5 V
ID (A)
–10 –8
TO-251
S
TO-252
G
Drain Connected to Tab G D S G D S
and DRAIN-TAB
Top View Order Number: SUD10P06-280L
D P-Channel
MOSFET
Top View Order Number: SUU10P06-280L
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Gate-Source
Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C
Symbol
VGS ID IDM IS IAR EAR PD TJ, Tstg
Limit
"20 –10 –7 –20 –10 –10 5 37 2a –55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
FR4 Board Mount Junction-to-Ambienta Junction-to-Case Notes a. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70780 S-20349—Rev. F, 18-Apr-02 www.vishay.com Free Air RthJA RthJC
Symbol
Typical
60 120 3.7
Maximum
70 140 4.0
Unit
_C/W
2-1
www.DataSheet4U.net
SUD/SUU10P06-280L
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown
Voltage Gate-Threshold
Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = –250 mA VDS = VGS, ID = ...
