www.DataSheet4U.net
SUU50N03-10P
Vishay Siliconix
N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized
PRODUCT SUMMARY
V...
www.DataSheet4U.net
SUU50N03-10P
Vishay Siliconix
N-Channel 30-V (D-S), 175_C,
MOSFET PWM Optimized
PRODUCT SUMMARY
V(BR)DSS (V)
30
rDS(on) (Ω)
0.010 @ VGS = 10 V 0.014 @ VGS = 4.5 V
ID (A)a
20 18
TO-251
D
G and DRAIN-TAB
G D S Top View Order Number: SUU50N03-10P
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TA = 25_C TA = 100_C ID IDM IS
Symbol
VDS VGS
Limit
30
20 20 14 100 20 71b 8.3a --55 to 175
Unit
V
A
W _C
THERMAL RESISTANCE RATINGS
Parameter
t ≤ 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case Notes: a. Surface mounted on 1” x 1” FR4 Board, t ≤ 10 sec. b. See SOA curve for
voltage derating. Document Number: 71296 S-01706—Rev. A, 14-Aug-00 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
15 40 1.75
Maximum
18 50 2.1
Unit
_C/W
1
www.DataSheet4U.net
SUU50N03-10P
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = 20 V VDS = 30 V, VGS = 0 V Zero Gate
Voltage g Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C V...
