SUV90N06-05
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
60
0.0052 ...
SUV90N06-05
Vishay Siliconix
N-Channel 60-V (D-S) 175 °C
MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
60
0.0052 at VGS = 10 V
0.0072 at VGS = 4.5 V
TO-262
ID (A) 90a
FEATURES TrenchFET® Power
MOSFET 175 °C Junction Temperature PWM Optimized
APPLICATIONS Isolated DC/DC Converters
- Primary-Side Switch
D
1 23 G
G DS Top View SUV90N06-05
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source
Voltage Gate-Source
Voltage
VDS
60
V
VGS
± 20
Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current
TC = 25 °C TC = 125 °C
ID
90a 90a
A
IDM
240
Avalanche Current
IAS
75
Single Pulse Avalanche Energyb
L = 0.1 mH
EAS
280
mJ
Maximum Power Dissipationb
TC = 25 °C
350c
TA = 25 °Cd
PD
4.3
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (PCB Mount)d Junction-to-Case Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for
voltage derating. d. When Mounted on 1" square PCB (FR-4 material).
Document Number: 72112 S-71599-Rev. C, 30-Jul-07
Symbol RthJA RthJC
Limit 40 0.5
Unit °C/W
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SUV90N06-05
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VDS = 0 V, ID = 250 µA
Gate-Threshold
Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0...