SUY50N03-10CP

www.DataSheet4U.net SUY50N03-10CP New Product Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency PRODUCT SUMMARY V(BR)DSS (V) 30 APPLICATIONS ID (A)a 15 18 rDS(on) (W) 0.010 @ VGS = 10 V 0.012 @ VGS = 4.5 V D Buck Converter – High Side – Low Side D Synchronous Rectifier – Secondary Rectifier D TO-251 Notes: 1. Drain Connected to Tab G D S 2. Leads Trimmed to 0.092” " 0.003” Top View Order Number: SUY50N03-10CP G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TA = 25_C TA = 100_C ID IDM IS Symbol VDS VGS Limit 30 "20 15 14 100 20 71b 8.3a –55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes: a Surface mounted on 1” x 1” FR4 Board, t v 10 sec. b See SOA curve for voltage derating. Document Number: 71700 S-05396—Rev. A, 21-Jan-02 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 15 40 1.75 Maximum 18 50 2.1 Unit _C/W 1 www.DataSheet4U.net SUY50N03-10CP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Volt...