SVF12N60CF_Datasheet
12A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF12N60CF is an N-channel enhancement mode power MO...
SVF12N60CF_Datasheet
12A, 600V N-CHANNEL
MOSFET
GENERAL DESCRIPTION
SVF12N60CF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
12A,600V,RDS(on)(typ.)=0.58@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF12N60CF
Package TO-220F-3L
Marking SVF12N60CF
Hazardous Substance Control
Halogen free
Packing Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3 Page 1 of 7
SVF12N60CF_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC=25C) -Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol VDS VGS
ID
IDM
PD
EAS TJ Tstg
Ratings 600 ±30 12 7.6 48 51 0.41 798
-55~+150 -55~+150
Unit V V
A
A W W/C mJ C C
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Sy...