MOSFET. SVF3N80F Datasheet

SVF3N80F Datasheet PDF


SVF3N80F
SVF3N80M/F/D_Datasheet
3A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF3N80M/F/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary F-CellTM structure VDMOS technology. The
improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
3A, 800V, RDS(on)(typ.)=3.8Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF3N80M
SVF3N80F
SVF3N80D
SVF3N80DTR
Package Type
TO-251-3L
TO-220F-3L
TO-252-2L
TO-252-2L
Marking
SVF3N80M
SVF3N80F
SVF3N80D
SVF3N80D
Material
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.03.15
Page 1 of 9


Part SVF3N80F
Description 800V N-CHANNEL MOSFET
Feature SVF3N80F; SVF3N80M/F/D_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N80M/F/D is an N-channel en.
Manufacture Silan Microelectronics
Datasheet
Download SVF3N80F Datasheet


SVF3N80M/F/D_Datasheet 3A, 800V N-CHANNEL MOSFET GENERAL DES SVF3N80F Datasheet





SVF3N80F
SVF3N80M/F/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Rating
SVF3N80M/D
SVF3N80F
800
±30
3.0
1.9
12.0
80 39
0.64 0.31
173
-55+150
-55+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
Rating
SVF3N80M/D
1.56
110
SVF3N80F
3.21
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=800V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=1.5A
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=400V, ID=3.0A,
RG=25Ω
(Note 2,3)
VDS=640V, ID=3.0A,
VGS=10V
(Note 2,3)
Min.
800
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
3.8
390.3
42.7
2.0
13.87
30.53
22.40
18.27
9.00
2.46
3.74
Max.
--
10
±100
4.0
4.8
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
Ω
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.03.15
Page 2 of 9



SVF3N80F
SVF3N80M/F/D_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS Integral Reverse P-N
Junction Diode in the
ISM MOSFET
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
VSD IS=3.0A,VGS=0V
Trr IS=3.0A,VGS=0V,
Qrr dIF/dt=100A/µS
Notes:
1. L=30mH, IAS=3.15A, VDD=100V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width 300μs,Duty cycle2%;
3. Essentially independent of operating temperature.
Min.
--
--
Typ.
--
--
Max.
3.0
12.0
Unit
A
-- -- 1.4 V
-- 190 -- ns
-- 0.53 -- µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2011.03.15
Page 3 of 9




@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)