SVF4N60D/F/FG/T/K/M/MJ_Datasheet
4A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N60D/F/FG/T/K/M/MJ is an N-channel en...
SVF4N60D/F/FG/T/K/M/MJ_Datasheet
4A, 600V N-CHANNEL
MOSFET
GENERAL DESCRIPTION
SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF4N60T SVF4N60F SVF4N60FG SVF4N60K SVF4N60D SVF4N60DTR SVF4N60MJ SVF4N60M
Package TO-220-3L TO-220F-3L TO-220F-3L TO-262-3L TO-252-2L TO-252-2L TO-251J-3L TO-251D-3L
Marking SVF4N60T SVF4N60F SVF4N60FG SVF4N60K SVF4N60D SVF4N60D SVF4N60MJ SVF4N60M
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material Pb free Pb free Halogen free Pb free Pb free Pb free Pb free Pb free
Packing Tube Tube Tube Tube Tube
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REV:1.6
2012.07.24 Page 1 of 11
Silan
Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted;reference only)
Characteristics
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power D...