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SVF7N60CMJ Datasheet

Part Number SVF7N60CMJ
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 600V N-CHANNEL MOSFET
Datasheet SVF7N60CMJ DatasheetSVF7N60CMJ Datasheet (PDF)

SVF7N60CF/S/K/MJ/D/T_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in.

  SVF7N60CMJ   SVF7N60CMJ






600V N-CHANNEL MOSFET

SVF7N60CF/S/K/MJ/D/T_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  7A, 600V, RDS(on)(typ)=0.96@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF7N60CF SVF7N60CS SVF7N60CSTR SVF7N60CK SVF7N60CMJ SVF7N60CD SVF7N60CDTR SVF7N60CT Package TO-220F-3L TO-263-2L TO-263-2L TO-262-3L TO-251J-3L TO-252-2L TO-252-2L TO-220-3L Marking SVF7N60CF SVF7N60CS SVF7N60CS SVF7N60CK SVF7N60C SVF7N60C SVF7N60C SVF7N60CT Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Halogen free Pb free Packing Tube Tube Tape & Reel Tube Tube Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.7 Page 1 of 10 SVF7N60CF/S/K/MJ/D/T_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25C TC=100C Power Dissipa.


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