SVFP4N65CAD

Silan Microelectronics SVFP4N65CAD_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP4N65CAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  4A, 650V, RDS(on)(typ.)=2.3@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L NOMENCLATURE S V F PX N E X X C A X Silan VDMOS Code of F-Cell process Process Version,P denotesPASSIVATION Nominal current,using 1 or 2 digits: Example:4 denotes 4A,10 denotes 10A,08 denotes 0.8A N denotes N Channel Package information. Example: FJ:TO-220FJ;FQ:TO-220FQ REV. Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V. Special Features indication, May be omitted. Example: E denotes embeded ESD structure ORDERING INFORMATION Part No. SVFP4N65CAD Package TO-252-2L Marking P4N65CAD Hazardous Substance Control Halogen free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.0 Page 1 of 8 Silan Microelectronics SVFP4N65CAD_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C, unles...