SVG104R5NT

Silan Microelectronics SVG104R5NT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG104R5NT(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Management for Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L 1 3 TO-263-2L NOMENCLATURE S V GX X X R X N X Silan Low voltage SGT MOS products Nominal voltage, using 2 digits; Example: 04 denotes 40V, 10 denotes 100V Package information. Example: T:TO-220; D:TO- 252; MJ:TO-251J; Channel polarity: N denotes N channel, P denotes P channel Resistance: R75 denotes 0.7mΩ；7R5 denotes 7.5mΩ; 100 denotes 10mΩ; 101 denotes 100mΩ ORDERING INFORMATION Part No. Package SVG104R5NT SVG104R5NS SVG104R5NSTR TO-220-3L TO-263-2L TO-263-2L Marking 104R5NT 104R5NS 104R5NS Hazardous Substance Control Pb free Halogen free Halogen free Packing Tube Tube Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 1 of 8 Silan Microelectronics SVG104R5NT(S)_Datasheet ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation(T...