SVS12N80FJH

Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  12A,800V, RDS(on)(typ.)=0.37@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 TO-220F-3L 1 3 TO-263-2L NOMENCLATURE Silan DPMOS Code of DWell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A N denotes N Channel SVSXNXXXDX Process breakdown logo default: first generation process D2: second generation process; D3: third generation process Packageinformation.Examp:F:TO-220F. Nominal Voltage,using 2 digits Example:60 denotes 600V,65 denotes 650V. ORDERING INFORMATION Part No. SVS12N80F SVS12N80FJ SVS12N80S SVS12N80STR SVS12N80FJH SVS12N80PN Package TO-220F-3L TO-220FJ-3L TO-263-2L TO-263-2L TO-220FJH-3L TO-3P Marking SVS12N80F SVS12N80FJ SVS12N80S SVS12N80S 12N80FJH 12N80 Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Hal...