SVS7N60DD2TR

SVS7N60F(FJ)(D)D2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS7N60F(FJ)(D)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES  7A,600V, RDS(on)(typ.)=0.48@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Enhanced avalanche capability  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No. SVS7N60FJD2 SVS7N60DD2TR SVS7N60FD2 Package TO-220FJ-3L TO-252-2L TO-220F-3L Marking 7N60FJD2 SVS7N60DD2 SVS7N60FD2 Hazardous substance control Halogen free Halogen free Halogen free Packing Tube Tape&Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.3 Page 1 of 9 SVS7N60F(FJ)(D)D2_Datasheet ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25C) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation (TC=25C) - Derate above 25C Single Pulsed Avalanche Energy (Note 1) Reverse diode dv/dt (Note 2) MOSFET dv/dt ruggedness (Note 3) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS dv/dt dv/dt TJ Tstg Rat...